• Title of article

    A solution growth route to nanocrystalline nickel oxide thin films

  • Author/Authors

    Biljana Pejova)، نويسنده , , Tanja Kocareva، نويسنده , , Metodija Najdoski، نويسنده , , Ivan Grozdanov، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    8
  • From page
    271
  • To page
    278
  • Abstract
    A chemical route for preparation of NiO thin films on glass substrates from solution containing nickel 2q.ions and urea is presented. The deposition process is based on the fact that urea decomposes to CO2and NH3by heating at higher temperature. The as-deposited and post-deposition heat-treated materials were characterized by X-ray analysis and FTIR spectroscopy. The results of some optical and electrical measurements made on these films are discussed. X-ray analysis confirmed that as-deposited film is 3Ni OH.2P2H2O, while the post-deposition heat-treated one is nickel oxide with an average crystal size of 13 nm. According to the optical investigations, the absorption coefficient of the deposited material increases upon annealing, the absorption of the annealed films gradually decrease with an increase of the wavelength in the 390–820 nm region. The optical band gap for the post-deposition heat-treated films is 3.6 eV. While the as-deposited thin films are dielectric, the post-deposition treated ones are characterized by resistivity of several MVsrcm2 at room temperature. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    Nickel oxide , nanocrystalline materials , semiconductors , Chemical solution method , Thin solid films , optical band gap
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996467