Title of article :
Stress relaxation by generation of L-shape misfit dislocations in
001/ heterostructures with diamond and sphalerite lattices
Author/Authors :
A.V. Kolesnikov )، نويسنده , , A.P. Vasilenko، نويسنده , , E.M. Trukhanov، نويسنده , , A.K. Gutakovsky، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The problem of generation of L-shape misfit dislocations MDs.is investigated for 001.heterosystems with diamond
and sphalerite crystal structures. These 608 MDs can be formed by modified Frank–Read dislocation sources as well as by
Hagen–Strunk ones. The analysis shows that perpendicular dislocation lines included in L-shape MDs have different types
of screw dislocation components namely, left-screw and right-screw ones.. As a result, the stress-releasing process tends to
slow preventing further generation of L-shape dislocations and annihilation of threading dislocations TDs.. To minimize
density of TDs and to form equilibrium plane MD networks at the final stage of stresses relaxation process, it is necessary to
generate mutually perpendicular MD arrays with the same types of screw dislocation components. q2000 Elsevier Science
B.V. All rights reserved.
Keywords :
Misfit dislocations , Heterostructure , Semiconductor , Crystal defects
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science