Temperature effect on the reconstruction of SbrSi 001/ interface studied by high resolution core level spectroscopy and RHEED analysis

The adsorption of three monolayers 3 MLs.of Sb at y1208C on the Si 001.c 4=2.surface and the subsequent annealing up to 6508C were followed by high resolution core level spectroscopy and RHEED analysis. By relating the electron diffraction patterns to the Si2p and Sb4d core level spectra measured after each annealing cycle, it was possible to monitor the evolution of the SbrSi interface structure up to the achievement of a diffuse 2=1.reconstruction. Even after the annealing to 6508C, the quality of the surface reconstruction remained poor, as attested by the RHEED pattern, by the intensity of the Si2p surface component and by the broadening of the Sb4d lineshape. q2000 Published by Elsevier Science B.V.