• Title of article

    Photoemission study of Gd atoms on CdTe 100/ surface

  • Author/Authors

    E. Guziewicz، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    231
  • To page
    236
  • Abstract
    A few monolayers of Gd atoms were evaporated on a clean CdTe p. 100. bulk crystal. and CdTe n. 100. epitaxial layer.surface. Constant initial state CIS. spectra were measured at the Gd4d™Gd4f Fano resonance in the photon energy range of 140–160 eV. both after evaporation and heating processes. The binding energy of the Gd4f state was determined after Gd evaporation 9.43 and 9.50 eV for p- and n-type crystals, respectively.and after heating 9.00 and 9.80 eV.. Energy distribution curves EDCs.measured in the photon energy range 50–100 eV.show additional density of states at the valence band edge only for CdTe n.rGd crystal. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    Electronic structure , Semimagnetic semiconductors , Resonant photoemission spectroscopy
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996512