Title of article
Photoemission study of Gd atoms on CdTe 100/ surface
Author/Authors
E. Guziewicz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
231
To page
236
Abstract
A few monolayers of Gd atoms were evaporated on a clean CdTe p. 100. bulk crystal. and CdTe n. 100. epitaxial
layer.surface. Constant initial state CIS. spectra were measured at the Gd4d™Gd4f Fano resonance in the photon energy
range of 140–160 eV. both after evaporation and heating processes. The binding energy of the Gd4f state was determined
after Gd evaporation 9.43 and 9.50 eV for p- and n-type crystals, respectively.and after heating 9.00 and 9.80 eV.. Energy
distribution curves EDCs.measured in the photon energy range 50–100 eV.show additional density of states at the
valence band edge only for CdTe n.rGd crystal. q2000 Elsevier Science B.V. All rights reserved.
Keywords
Electronic structure , Semimagnetic semiconductors , Resonant photoemission spectroscopy
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996512
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