Direct observation of interface effects of thin AlAs 100/ layers buried in GaAs

A study of the electronic structure of ultrathin AlAs layers buried in GaAs 100.and their interfaces is presented. Al L2,3 soft-X-ray-emission SXE.spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, which are reproduced using ab initio calculations. q2000 Elsevier Science B.V. All rights reserved