• Title of article

    Smooth interface effects on the confinement properties of GaSbrAl Ga Sb quantum wells

  • Author/Authors

    Artur B. Adib، نويسنده , , Jeanlex S. de Sousa، نويسنده , , Gil A. Farias، نويسنده , , Valder N. Freire، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    336
  • To page
    340
  • Abstract
    A theoretical investigation on the confinement properties of GaSbrAl Ga Sb single quantum wells QWs.with x 1yx smooth interfaces is performed. Error function erf.-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    GaSbrAl xGa1yxSb quantum wells , Interface effects , Exciton energy blue shift , Carriers confinement properties
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996531