Title of article
Smooth interface effects on the confinement properties of GaSbrAl Ga Sb quantum wells
Author/Authors
Artur B. Adib، نويسنده , , Jeanlex S. de Sousa، نويسنده , , Gil A. Farias، نويسنده , , Valder N. Freire، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
336
To page
340
Abstract
A theoretical investigation on the confinement properties of GaSbrAl Ga Sb single quantum wells QWs.with x 1yx
smooth interfaces is performed. Error function erf.-like interfacial aluminum molar fraction variations in the QWs, from
which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that
the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is
stronger in thin QWs. q2000 Elsevier Science B.V. All rights reserved.
Keywords
GaSbrAl xGa1yxSb quantum wells , Interface effects , Exciton energy blue shift , Carriers confinement properties
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996531
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