Title of article
Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon
Author/Authors
N.E. Korsunskaya)، نويسنده , , E.B. Kaganovich، نويسنده , , L.Yu. Khomenkova، نويسنده , , B.M. Bulakh، نويسنده , , B.R. Dzhumaev، نويسنده , , G.V. Beketov، نويسنده , , E.G. Manoilov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
349
To page
353
Abstract
Plenty photoluminescence PL. and plenty photoluminescence excitation PLE. spectra, as well as layer structure and
surface substances on Si crystallites of porous silicon prepared by different technique, have been investigated by
photoluminescence, atomic force microscope AFM.and infrared IR.transmission methods. It is shown that PLE spectra,
consisted of several excitation bands, do not depend on Si crystallites sizes. The nature of excitation bands is discussed.
q2000 Elsevier Science B.V. All rights reserved
Keywords
Porous silicon , Photoluminescence , Surface substances , Excitation bands , layer structure
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996534
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