Title of article
Diffusion of Ga on the GaAs 113/ surface in thew110xdirection during MOVPE growth
Author/Authors
Markus Pristovsek)، نويسنده , , Housni Menhal، نويسنده , , Jo¨rg-Thomas Zettler، نويسنده , , Aimo Winkelmann and Wolfgang Richter، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
433
To page
436
Abstract
We have measured the valley spacing on the GaAs 113.surface using ex-situ atomic force microscopy AFM.. From
samples grown at different temperatures and partial pressures, the diffusion length, activation energies for diffusion and
diffusion constants were derived. The results were correlated to in-situ reflectance anisotropy spectroscopy RAS.spectra.
On GaAs 113., mainly, an 8=1.reconstruction is found with an EDiffs 0.38"0.06.eV. q2000 Elsevier Science B.V.
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Keywords
Gallium diffusion , Step-bunching , High index surfaces , activation energy , MOVPE
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996548
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