Title of article
Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
Author/Authors
Y. Cordier، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
442
To page
445
Abstract
In this work, MBE growth of lattice-relaxed InAlAs graded buffer layers on GaAs substrates has been studied. A simple
method has been developed to optimize indium content decrease in inverse step buffer layers to generate totally relaxed
metamorphic layers. The dependence of strain relaxation on the composition profile of the graded buffer is shown. q2000
Elsevier Science B.V. All rights reserved.
Keywords
Lattice mismatch , Metamorphic , strain relaxation , Atomic force microscopy , InAlAs on GaAs , Molecular Beam Epitaxy , High-resolution X-ray diffraction
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996550
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