Detection of interface states correlated with SiO rSi 111/ 2 interface structures

The interface state densities near the midgap of an atomically flat Si 111.surface were measured as oxidation progressed. It was found that an anomalous decrease in interface state densities near the midgap was observed periodically in accordance with periodic changes in interface structures with the progress of oxidation. Therefore, interface state densities near the midgap closely related with interface structures were found. It is deduced from the correlation among the interface and surface structures and interface state density near the midgap of Si, that isolated Si3q species is the possible origin of the interface states near the midgap of Si. q2000 Elsevier Science B.V. All rights reserved