Title of article :
Atomic oxygen-induced surface processes: D O formation and D 2 2 desorption on the DrSi 100/ surface
Author/Authors :
S. Shimokawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
94
To page :
98
Abstract :
The atomic oxygen-induced surface reaction has been studied on the DrSi 100.surfaces. The mass spectroscopic method reveals that D2desorption as well as D2O formation are induced upon collision of oxygen atoms with the DrSi 100. surfaces. As the oxygen atoms are taken into the Si`Si bonds, the desorption of D2 and D2O molecules is terminated despite the survival of the D adatoms. We propose a possible mechanism of the oxygen-induced D2O formation and D2 desorption. q2000 Elsevier Science B.V. All rights reserved
Keywords :
Atomic oxygen , Hydrogen abstraction , Hydrogen-terminated Si surface
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996576
Link To Document :
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