Title of article :
Atomic oxygen-induced surface processes: D O formation and D 2 2
desorption on the DrSi 100/ surface
Author/Authors :
S. Shimokawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The atomic oxygen-induced surface reaction has been studied on the DrSi 100.surfaces. The mass spectroscopic method
reveals that D2desorption as well as D2O formation are induced upon collision of oxygen atoms with the DrSi 100.
surfaces. As the oxygen atoms are taken into the Si`Si bonds, the desorption of D2 and D2O molecules is terminated
despite the survival of the D adatoms. We propose a possible mechanism of the oxygen-induced D2O formation and D2
desorption. q2000 Elsevier Science B.V. All rights reserved
Keywords :
Atomic oxygen , Hydrogen abstraction , Hydrogen-terminated Si surface
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science