Title of article :
Photo-assisted MOCVD of copper
using Cu(hfa)(COD) as precursor
Author/Authors :
S. Vidal، نويسنده , , F. Maury*، نويسنده , , A. Gleizes، نويسنده , , C. Mijoule، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
Cu thin ®lms were deposited in the temperature range 100±1808C using the title precursor by photo-MOCVD. The
ultraviolet (UV) photons facilitate a clean removal of the ligands. Consequently, the growth rate is slightly increased under
irradiation and the morphology and the ®lm resistivity is improved. # 2000 Elsevier Science B.V. All rights reserved
Keywords :
Cu(I) precursor , Theoretical UV spectrum , Cu ®lms , Photo-CVD
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
