Abstract :
Pulsed laser deposition (PLD) method of thin ®lms fabrication requires appropriate choice of technological parameters.
These are: substrate temperature, the energy density of the laser radiation, its wavelength, the pulse duration, the distance
target±substrate, etc. Exact analysis of the in¯uence of these parameters on the layer growth is too dif®cult to be performed.
Therefore, the computer simulation of the layer growth is very promising method for determining the growth parameters. In
the paper, the growth of Si and CdTe ®lms on the (0 0 1) substrate surface was simulated by the Monte Carlo method. The
model for layer growth included: surface diffusion, adsorption and desorption of adatoms, kinetic energy distribution of atoms
or ions in the plasma plume and its space and time structure. Results obtained have been compared with some experimental
data. # 2000 Published by Elsevier Science B.V.