Title of article :
Quantum size effect in low energy electron diffraction of thin ®lms
Author/Authors :
M.S. Altman، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
6
From page :
82
To page :
87
Abstract :
Low energy electron microscopy (LEEM) is used to study the quantum size effect (QSE) in electron re¯ectivity from thin ®lms. Strong QSE interference peaks are seen below 20 eV for Cu and Ag ®lms on the W(1 1 0) surface and Sb ®lms on the Mo(0 0 1) surface. Simple inspection of QSE interference peaks reveals that all three metals grow atomic layer-by-atomic layer. Layer-speci®c I(V) spectra obtained with LEEM permit structural analysis by full dynamical multiple scattering LEED calculations for a layer-by-layer view of thin ®lm structure. # 2001 Elsevier Science B.V. All rights reserved.
Keywords :
Low energy electron diffraction , Low energy electron microscopy , Thin ®lm structure
Journal title :
Applied Surface Science
Serial Year :
2001
Journal title :
Applied Surface Science
Record number :
996688
Link To Document :
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