Title of article :
Barrier-height imaging of Cs-adsorbed Si(111)
Author/Authors :
Jun Yoshikawa، نويسنده , , Shu Kurokawa، نويسنده , , Akira Sakai، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
202
To page :
205
Abstract :
We have carried out STM and barrier-height imaging on the Cs-adsorbed Si(111) 7 7 surface. At small coverages, Cs atoms adsorbed on Si(111) at room temperature tend to form clusters, as previously observed by Hashizume et al. [J. Vac. Sci. Technol. B 9 (1991) 745]. Although they report empty-state images showing anomalous contrast, no such images are observed in our experiment. The measured barrier height decreases locally above Cs sites and exhibits no long-range variation around each adsorption site. The average reduction in the barrier height at Cs sites is found to be Df ˆ 0:87 eV. # 2001 Elsevier Science B.V. All rights reserved.
Keywords :
Silicon , Alkali metals , Work function measurements , Scanning tunneling microscopy
Journal title :
Applied Surface Science
Serial Year :
2001
Journal title :
Applied Surface Science
Record number :
996712
Link To Document :
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