Ion beam induced reaction of carbon ®lms on Si(1 0 0)

The irradiation effects of 2 MeV He‡ and Ar‡ ions on the ®lm structure of the C±Si system were investigated with RHEED and XPS. The formation of SiC phase and/or the growth of epitaxial SiC were possible by He‡ irradiation for the carbon ®lms up to 0.7 nm in thickness, which was thinner than that by Ar‡ irradiation. The He‡ irradiation could not grow the turbostratic graphite which could be grown by Ar‡ irradiation. The mechanism of the formation and the epitaxial growth of SiC by ion irradiation was discussed from the view point of the energy transfer from the irradiated ions. # 2001 Elsevier Science B.V. All rights reserved.