Growth and characterization of CoSi2 ®lms on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi2 ®lm. This method includes an epitaxial growth of Co ®lms on Si (1 0 0) substrate, and in situ annealing of the Co/Si ®lms in vacuum. It has been found that at the substrate temperature of 3608C, fcc cobalt ®lm grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co ®lm and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 6008C, Co ®lm reacts with Si substrate and transforms into CoSi2. The CoSi2 ®lms prepared by this way are characterized by XTEM, XPS and AFM. # 2001 Elsevier Science B.V. All rights reserved