• Title of article

    Computer simulation of gas rarefaction effects and ®lm deposition characteristics in a magnetron sputtering apparatus

  • Author/Authors

    Tsukasa Kobayashi، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    5
  • From page
    405
  • To page
    409
  • Abstract
    Ar gas is known to be rare®ed in front of a magnetron sputtering cathode due to the collisional heating by energetic sputtered atoms. The effects of the Ar rarefaction in a magnetron sputtering apparatus used for Ti-®lm deposition were investigated using the direct simulation Monte Carlo (DSMC) method which is capable of taking gas rarefaction effects into account. The calculated ®lm deposition rate on a substrate and the ®lm coverage in a small hole were larger than those calculated by the conventional simulation where the gas rarefaction is not included. This shows that the gas rarefaction improves both the ®lm deposition rate and the ®lm coverage. # 2001 Elsevier Science B.V. All rights reserved.
  • Keywords
    Film deposition , computer simulation , Magnetron sputtering , Direct simulation Monte Carlo method
  • Journal title
    Applied Surface Science
  • Serial Year
    2001
  • Journal title
    Applied Surface Science
  • Record number

    996754