Title of article
Kinetic surface structuring during homoepitaxy of GaAs (110): a model study
Author/Authors
A Videcoq، نويسنده , , M Vladimirova، نويسنده , , A Pimpinelli، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
140
To page
145
Abstract
We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching–step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.
Keywords
GaAs , Morphological instabilities , Surface structuring , Growth modeling , Monte Carlo simulations , Homoepitaxy
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997024
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