Title of article
ZnS thin films grown on Si(100) by XeCl pulsed laser ablation
Author/Authors
K.T Hillie، نويسنده , , C Curren، نويسنده , , H.C. Swart، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
73
To page
77
Abstract
The growth of ZnS based phosphor thin films on a Si(100) substrate using pulsed XeCl (308 nm) laser deposition (PLD) for cathodoluminescene (CL) studies was investigated. Ultra high vacuum Auger electron spectroscopy (AES) was utilised to determine the surface composition of the thin films. X-ray diffraction (XRD) measurements revealed that (100) ZnS films have been preferentially grown on a Si(100) substrate. The Rutherford back scattering (RBS) results show that the growth rate, increased with an increase of the N2 pressure in the deposition chamber during deposition.
Keywords
Pulsed laser deposition , Zn based phosphors , Auger electron spectroscopy
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997139
Link To Document