Title of article
Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy
Author/Authors
R Srnanek، نويسنده , , R Kinder، نويسنده , , B Sciana، نويسنده , , D Radziewicz، نويسنده , , D.S McPhail، نويسنده , , S.D Littlewood، نويسنده , , I Novotny، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
139
To page
145
Abstract
Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy Original Research Article
Pages 139-145
R Srnanek, R Kinder, B Sciana, D Radziewicz, D.S McPhail, S.D Littlewood, I Novotny
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Abstract | Figures/Tables | References
Abstract
A method for determination of doping concentration profiles of GaAs multilayer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated ITO/ILO intensities determine the doping concentration in these points for values above 3×1016 cm−3. The results are compared with electrochemical capacitance–voltage technique and secondary ion mass spectrometry. Some specific problems are discussed
Keywords
Raman spectroscopy , SIMS , ECV , Doping concentration , Carrier concentration , Bevelled structure
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997147
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