Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy Original Research Article Pages 139-145 R Srnanek, R Kinder, B Sciana, D Radziewicz, D.S McPhail, S.D Littlewood, I Novotny Close preview | Purchase PDF - $35.95 | Recommended articles | Related reference work articles Abstract | Figures/Tables | References Abstract A method for determination of doping concentration profiles of GaAs multilayer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated ITO/ILO intensities determine the doping concentration in these points for values above 3×1016 cm−3. The results are compared with electrochemical capacitance–voltage technique and secondary ion mass spectrometry. Some specific problems are discussed