Title of article
The influence of chemical treatments on tungsten films found in integrated circuits
Author/Authors
Scott S. Perry، نويسنده , , Heather C. Galloway، نويسنده , , Paul Cao، نويسنده , , Evelynn J.R. Mitchell، نويسنده , , Debbie C. Koeck، نويسنده , , Christopher L. Smith، نويسنده , , Min Soo Lim، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
6
To page
13
Abstract
The influence of four different chemical solutions on the composition, morphology, and etch rates of thin, chemically vapor deposited tungsten films have been investigated. These films are the standard material patterned to create tungsten plugs in integrated circuits through a chemical mechanical planarization (CMP) step. The tungsten films were treated with aqueous solutions of KOH, KIO3+NaOH, H2O2+NH4OH, and H2O2+HCl. We have evaluated the resulting changes in the surface chemical composition of the tungsten film with X-ray photoelectron spectroscopy (XPS). Changes in film morphology have been recorded with atomic force microscopy and material removal rates have been determined with calibrated four-point-probe resistivity measurements. Together, these measurements demonstrate the complex manner in which chemical pre-treatments in the CMP process influence thin tungsten films.
Keywords
atomic force microscopy , Tungsten , Chemical mechanical planarization , Tungsten oxide , Chemical mechanical polishing , X-ray photoelectron spectroscopy
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997248
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