Title of article
Nanoindentation studies of (111) GaAs/InP epilayers
Author/Authors
R. Navamathavan، نويسنده , , D. Arivuoli، نويسنده , , G. Attolini، نويسنده , , C. Pelosi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
119
To page
125
Abstract
The indentation load–displacement behaviour of GaAs/InP epilayers grown by MOVPE were studied using a Berkovich indenter to determine elastic modulus and hardness. These were measured to be in the range 85–120 and 3.73–8.72 GPa, respectively. They vary drastically with layer thickness exhibiting over-critical behaviour.
Keywords
Nanoindentation , Heterostructures , Epilayers , Mechanical properties
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997260
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