Title of article :
Nanoindentation studies of (111) GaAs/InP epilayers
Author/Authors :
R. Navamathavan، نويسنده , , D. Arivuoli، نويسنده , , G. Attolini، نويسنده , , C. Pelosi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The indentation load–displacement behaviour of GaAs/InP epilayers grown by MOVPE were studied using a Berkovich indenter to determine elastic modulus and hardness. These were measured to be in the range 85–120 and 3.73–8.72 GPa, respectively. They vary drastically with layer thickness exhibiting over-critical behaviour.
Keywords :
Nanoindentation , Heterostructures , Epilayers , Mechanical properties
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
