Title of article
A novel method for the deposition of nanocrystalline Bi2Se3, Sb2Se3 and Bi2Se3–Sb2Se3 thin films — SILAR
Author/Authors
C.D. Lokhande، نويسنده , , B.R Sankapal، نويسنده , , S.D Sartale، نويسنده , , H.M. Pathan b، نويسنده , , M. Giersig، نويسنده , , V. Ganesan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
413
To page
417
Abstract
The successive ionic layer adsorption and reaction (SILAR) method is relatively new, simple and less expensive. This method is employed to deposit nanocrystalline Bi2Se3, Sb2Se3 and Bi2Se3–Sb2Se3 thin films onto amorphous glass substrates at low temperature (300 K). The preparative parameters such as concentration of precursor solutions, rinsing time, immersion cycles and immersion time are optimized to get nanocrystalline films. These films are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), energy dispersive X-ray analysis (EDAX), optical absorption and electrical measurement techniques.
Keywords
Thin films , SILAR method , Nanocrystallinity , Film characterization
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997383
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