Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

A new procedure for determination of the doping spikes location and the spatial extent of dopants in Si single and multi-δ-doped layers by micro-Raman spectroscopy is presented. The procedure is based on the evaluation of ITO/ILO intensities along the bevelled structure. The obtained values of Si extent from 4.0 to 4.5 nm are in good coincidence with values presented in the literature. After calibration, the procedure will be suitable for direct estimation of dopant profiles in δ-doped layers in semiconductor materials, where a bevel through the structures can be prepared.