Author/Authors :
E. E. Kalinina، نويسنده , , G. Kholujanov، نويسنده , , O. I. Obolenskii and A. V. Solov’ev ، نويسنده , , A. Strel’chuk، نويسنده , , V. Kossov، نويسنده , , R. Yafaev، نويسنده , , Kovarskii، نويسنده , , A. Shchukarev، نويسنده , , S. Obyden، نويسنده , , G. Saparin، نويسنده , , P. Ivannikov، نويسنده , , A. Hallén، نويسنده , , A. Konstantinov، نويسنده ,
Abstract :
The effect of ion implantation doping (ID) with high doses of Al followed by short high-temperature annealing of n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) has been studied. The comparative investigations of the structural and electrical properties, lateral and as a function of depth, in the CVD layers before and after Al ID p+n junction formations were determined by several different methods. Structural improvement of the CVD epitaxial layers close to Al ID p+n junction positions was revealed for the first time.
Keywords :
Ion implantation , p–n junctions , Defects , Silicon carbide
