Focused ion beam sputtering investigations on SiC

The focused ion beam (FIB) is a very useful tool to sputter holes with well-defined dimensions which can be easily analysed by surface profiling measurements. Applying this the sputtering yields of 6H:SiC were measured for 35 and 70 keV Si, Co, Ge, Nd and Au ions from a mass separated FIB. Additionally, the sputtering yield was determined as a function of the angle of incidence and the target temperature for gold ions. The swelling due to ion implantation will be discussed.