Title of article :
Progress towards SiC products
Author/Authors :
C.I. Harris، نويسنده , , S. Savage، نويسنده , , A. Konstantinov، نويسنده , , M. Bakowski، نويسنده , , P. Ericsson، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
6
From page :
393
To page :
398
Abstract :
Since the late 1980s, there has been a significant effort in the development of technology based on the semiconductor SiC, aimed at utilising the unique physical and electrical properties of this material to achieve high performance devices. Many factors governing the progress in development are beginning to converge with the result that the first commercial devices are appearing in the market place. The following article reviews some of the factors that are determining the progress in different application areas, including power electronics, high frequency devices and sensors. Breakthroughs in the technology in these areas will be believed to accelerate the adoption of SiC as a mature semiconductor material.
Keywords :
SiC , Power-electronics , RF , Sensors
Journal title :
Applied Surface Science
Serial Year :
2001
Journal title :
Applied Surface Science
Record number :
997488
Link To Document :
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