High quality SiC applications in radiation dosimetry

The current response of SiC on-line dosimeters to γ-radiation from a 60Co source is presented. The devices used are 4H–SiC epitaxial n-type layer deposited onto a 4H–SiC n+-type substrate wafer doped with nitrogen. Single-pad Schottky contacts have been produced by deposition of a 1000 Å gold film on the epitaxial layer using a lift-off technology and ohmic contacts have been deposited on the rear substrate side. The detector has been then embedded in epoxy resin and exposed to the 60Co source in the dose range 0.1–1 Gy. A signal response comparable to that of silicon standard dosimeters has been measured with the unbiased SiC device. The released charge has been observed to increase linearly with the dose and dose-rate.