LSP image sensors based on SiC heterostructures

A newly engineered ZnO:Al/a-p–i–n SixC1 − x:H/Al configuration for the laser scanner photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The effect of the sensing element structure and light source flux are investigated and correlated with the sensor output characteristics. When wide band gap doped layers are used, data reveals an increased image signal optimised to the blue, a dynamic range of two orders of magnitude, a sensitivity of 6 mA/W and a responsivity of 170 μW cm−2 at 530 nm. The main output characteristics such as image responsivity, resolution, linearity and dynamic range were analysed under reverse, and forward bias and short circuit mode. Results show that in a wide range of incident light power, the sensor performance are optimised in short circuit mode. A trade-off between read-out parameters and the required sensor characteristics is needed to minimise the cross talk between dark and illuminated regions.