Author/Authors :
B Gallas، نويسنده , , C.-C Kao، نويسنده , , S Fisson، نويسنده , , G Vuye، نويسنده , , J. Rivory، نويسنده , , Y Bernard، نويسنده , , C. Belouet، نويسنده ,
Abstract :
SiOx remains the main starting material for obtaining nanocrystalline Si embedded in a SiO2 matrix. A SiOx layer grown by co-evaporating Si and SiO2 has been successfully annealed using a KrF pulsed excimer laser operating at 248 nm. Abrasion of the film surface was observed above 85 mJ/cm2 and phase separation between Si-rich and SiO2-rich phases was initiated above this fluence as observed by XPS.
