Low temperature growth of metal oxide thin films by metallorganic laser photolysis

The preparation of TiO2, In2O3, SnO2 doped In2O3 (ITO) and PbZr0.5Ti0.5O3 (PZT) films have been investigated by the metallorganic (MO) laser photolysis. TiO2 anatase phase was successfully obtained from Ti-2-ethylhexanolate by a two-step irradiation method, while rutile was formed from TiOacac under the same irradiation conditions. In2O3 and ITO films were crystallized by ArF irradiation above the laser fluence of 10 mJ/cm2. The resistivity of the In2O3 film irradiated by further ArF laser in a vacuum and air atmosphere was 2.2×10−2 and 2.2×10−1 Ω cm, respectively. The lowest resistivity of the ITO film irradiated by the ArF laser in a vacuum was 6.0×10−4 Ω cm. Epitaxial PZT film on a SrTiO3 substrate was successfully obtained by MO laser photolysis.