Title of article
The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution
Author/Authors
R.Kh Akchurin، نويسنده , , A.Y Andreev، نويسنده , , O.I Govorkov، نويسنده , , A.A Marmalyuk، نويسنده , , A.V Petrovsky، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
209
To page
213
Abstract
The experimental and calculation data on indium distribution in (Al)GaAs/InGaAs/(Al)GaAs quantum well (QW) structures are presented. Experimental examination revealed increase of In concentration in the growth direction in single QW and relative shift of composition in close-spaced multiple QWs. The results of calculation based on consideration of elastic strain energy contribution to the free energy of mixing are in good agreement with experimental data and testify that the elastic stresses give essential contribution in the observed effect.
Keywords
Elastic strain , QW , In distribution , InGaAs
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
997722
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