Acceptor- and donor-like interfacial states at ZnSe/GaAs heterovalent interfaces

The properties of ZnSe/GaAs interface with acceptor-like or donor-like state have been studied. The electric field and potential profile at the interface with donor-like or acceptor-like state has been calculated by solving Poisson equation, and been detected by photo-voltage measurement. The photocurrent measurement shows different behaviors in these two kinds of samples.