Author/Authors :
A. Ohi، نويسنده , , J. Labis، نويسنده , , Y. MORIKAWA، نويسنده , , T. Fujiki، نويسنده , , M. Hirai، نويسنده , , M. Kusaka، نويسنده , , M. Iwami، نويسنده ,
Abstract :
Deposition of Ni as contact on 4H–SiC has been investigated. Ni/4H–SiC samples were annealed at temperatures of 600, 800 and 950 °C for 30 min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L2,3 SXE showed the formation of Ni2Si for all annealing temperatures. The C K SXE indicated the formation of graphite and graphitic carbons at annealing temperatures of 950 °C and below 800 °C, respectively.
Keywords :
Soft X-ray emission , Synchrotron radiation , Silicon carbide , Interfacial reaction
