Title of article :
The effects of the time-dependent and exposure time to air on Au/n-GaAs schottky barrier diodes
Author/Authors :
A.F ?zdemir، نويسنده , , A K?kçe، نويسنده , , A Türüt، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
8
From page :
188
To page :
195
Abstract :
A study on Au/n-GaAs Schottky barrier diode (SBD) parameters with and without thin native oxide layer fabricated on n-type GaAs has been made. The native oxide layer with different thicknesses on chemically cleaned GaAs surface was obtained by exposing the GaAs surfaces to clean room air before metal evaporation. The native oxide thicknesses of samples AuD2, AuD3, AuD4, AuD5, and AuD6 are in the form AuD2
Keywords :
Schottky barrier diodes , Equilibrium barrier value , Exposure time
Journal title :
Applied Surface Science
Serial Year :
2002
Journal title :
Applied Surface Science
Record number :
997942
Link To Document :
