Properties of Ag doped ZnTe thin films by an ion exchange process

ZnTe thin films prepared by two sourced thermal evaporation were immersed in AgNO3 solution for different time periods, then heated in vacuum. The resistivity of the doped film reduced to 0.01% of the resistivity of the undoped film. The effect of Ag doping on the structure of the films was studied by X-ray diffraction (XRD), while optical properties such as film thickness, refractive index, absorption coefficient and optical band gap of the films were calculated by fitting the transmittance in the range 400–2000 nm.