Title of article
Surface nitridation of nickel using hydrazoic acid (HN3) and nitrogen ion implantation
Author/Authors
Keping Han، نويسنده , , D.Howard Fairbrother، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
229
To page
235
Abstract
Auger electron spectroscopy (AES), in conjunction with argon ion sputtering/depth profiling have been used to study the nature of nickel substrates nitrided by chemical modification with hydrazoic acid (HN3) and nitrogen ion implantation. Nickelnitrogen bond formation was evidenced from both treatment strategies, although a thicker nitrided overlayer was observed during nitrogen ion implantation. For ion implantation, the rate of surface nitridation was found to be independent of ion energy in the range of 2–5 keV, although at higher beam energies thicker nitride films were produced. The NiN bond was stable under vacuum conditions until ≈650 K. The influence of the surface chemical composition on the N(KLL) AES transition in metalnitrogen (MN) containing compounds is also illustrated for Ni, Al, and NiAl substrates exposed to HN3.
Keywords
Nitride , AES , Ion implantation , nickel , Hydrazoic acid
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
998103
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