• Title of article

    Surface nitridation of nickel using hydrazoic acid (HN3) and nitrogen ion implantation

  • Author/Authors

    Keping Han، نويسنده , , D.Howard Fairbrother، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    7
  • From page
    229
  • To page
    235
  • Abstract
    Auger electron spectroscopy (AES), in conjunction with argon ion sputtering/depth profiling have been used to study the nature of nickel substrates nitrided by chemical modification with hydrazoic acid (HN3) and nitrogen ion implantation. Nickelnitrogen bond formation was evidenced from both treatment strategies, although a thicker nitrided overlayer was observed during nitrogen ion implantation. For ion implantation, the rate of surface nitridation was found to be independent of ion energy in the range of 2–5 keV, although at higher beam energies thicker nitride films were produced. The NiN bond was stable under vacuum conditions until ≈650 K. The influence of the surface chemical composition on the N(KLL) AES transition in metalnitrogen (MN) containing compounds is also illustrated for Ni, Al, and NiAl substrates exposed to HN3.
  • Keywords
    Nitride , AES , Ion implantation , nickel , Hydrazoic acid
  • Journal title
    Applied Surface Science
  • Serial Year
    2002
  • Journal title
    Applied Surface Science
  • Record number

    998103