Title of article
Characterization of tin-doped indium oxide films prepared by coating photolysis process
Author/Authors
Tetsuo Tsuchiya، نويسنده , , Hiroyuki Niino، نويسنده , , Akira Yabe، نويسنده , , Iwao Yamaguchi، نويسنده , , Takaaki Manabe، نويسنده , , Toshiya Kumagai، نويسنده , , Susumu Mizuta، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
512
To page
515
Abstract
Tin-doped indium oxide films have been grown on quartz substrate by the coating photolysis process. The optical and electrical properties of the obtained films were investigated. It was found that the resistivities of the In2O3 and ITO films depend on the irradiation atmosphere. The resistivities of the ITO film irradiated by the ArF laser in vacuum of 10−3 and 10−5 Torr were 1.0×10−3 and 6.0×10−4 Ω cm, respectively.
Keywords
ITO , Coating photolysis process , ArF laser , Patterning
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
998249
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