Surface compositional changes in GaAs subjected to argon plasma treatment

X-ray photoelectron spectroscopy (XPS) has been employed to study surface compositional changes in GaAs (1 0 0) subjected to argon plasma treatment. The experimental results have been explained in terms of predicted argon ion energies, measured ion densities and etch rates. A model is proposed for the processes taking place at the surface of GaAs in terms of segregation, sputtering and surface relaxation. Stopping and range of ions in matter (SRIM) code has also been employed as an aid to identification of the mechanisms responsible for the compositional changes. Argon plasma treatment induced surface oxidation at very low energies and sputtering and surface damage with increasing energy.