Title of article
Characteristics of ZnO/Si prepared by Zn3P2 diffusion
Author/Authors
Young-Don Ko، نويسنده , , Jihoun Jung، نويسنده , , Kyu-Hyun Bang، نويسنده , , Min-Chul Park، نويسنده , , Kwang-Soo Huh، نويسنده , , Jae-Min Myoung، نويسنده , , Ilgu Yun، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
266
To page
271
Abstract
p-ZnO thin film formation on Si substrate is investigated using rf magnetron sputtering followed by Zn3P2 diffusion process. In order to form p-ZnO thin film, n-ZnO thin film is initially deposited on Si substrate using rf magnetron sputtering. Then, Zn3P2 source diffusion by closed ampoule technique is performed on ZnO/Si test structure. The electrical and optical characteristics of the ZnO thin films are investigated and the effect of Zn3P2 diffusion on the properties of ZnO thin films are examined. From the analysis results, it is verified that p-type ZnO thin film on p-Si substrate is formed by dopants diffusion.
Keywords
II–VI semiconductor , Si , Doping , RF magnetron sputtering , Diffusion
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
998373
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