Field electron emission from LaB6 and TiN emitter arrays fabricated by transfer mold technique

LaB6 and TiN field emitter arrays (FEAs) have been developed by the transfer mold technique to fabricate sharp, uniform, and low operation voltage FEAs using low work function materials. Because of the sharpening effect on the tips by thermally oxidized SiO2 layer of the molds, emitter tip radii are as small as less than 10 nm. The turn-on voltages of LaB6 and TiN FEA are 110–130 V lower than that of conventional Mo FEA by decreasing the surface barrier heights for field emission, having the same emitter shape. That of the gated LaB6 FEA is as low as 28 V even without high vacuum baking treatment. Transfer mold technique provides easiness of selecting low work function materials as well as superior uniformity, sharpness of FEAs. Transfer mold LaB6 and TiN FEAs are useful for low operation vacuum microelectronic devices.