Title of article
Effect of the projectile parameters on the charge state formation process in solid sputtering
Author/Authors
S.F. Belykh، نويسنده , , V.V. Palitsin، نويسنده , , A. Adriaens، نويسنده , , F. Adams، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
126
To page
129
Abstract
An effect of atomic and molecular projectile parameters on the charge state formation process in silicon sputtering has been studied. It was found that the electronic subsystem excitation in a subsurface region of silicon depends on projectile parameters and it affects the ionization probability P+ of sputtered atoms.
Keywords
Atomic and molecular ion–solid interaction , Silicon sputtering , Kinetic energy spectra , Ionization probability , Secondary ion mass spectrometry
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998404
Link To Document