Title of article :
Enhancement of cluster yield under gold dimer oblique bombardment of the silicon surface
Author/Authors :
M. Medvedeva، نويسنده , , I. Wojciechowski، نويسنده , , B.J. Garrison، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
148
To page :
151
Abstract :
Recent experiments of silicon bombardment show that kilo electron volt heavy polyatomic projectiles can increase the non-linear enhancement of the total yield of secondary silicon ions as well as the cluster ones. To understand why the heavy polyatomic projectiles increase the yields, molecular dynamics simulations of the bombardment of a Si(100)-(2×1) surface by Aln and Aun, n=1, 2 with an initial energy of 1.5 keV/atom at the incident angle of 45° are carried out. The microscopic analysis shows that upon penetrating into the substrate the Au2 constituents disintegrate slowly and the collision cascades overlap with a large probability. The process of sharing and depositing energy near the surface is very effective in the Au2 case under these bombardment parameters. Thus the probability of high yield events for enhancement of cluster yield is increased.
Keywords :
SIMS , Sputtering , Energy dissipation , Silicon
Journal title :
Applied Surface Science
Serial Year :
2003
Journal title :
Applied Surface Science
Record number :
998409
Link To Document :
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