Title of article :
Development of a C60+ ion gun for static SIMS and chemical imaging
Author/Authors :
S.C.C. Wong، نويسنده , , R. Hill، نويسنده , , P. Blenkinsopp، نويسنده , , N.P. Lockyer، نويسنده , , D.E. Weibel، نويسنده , , J.C. Vickerman، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
219
To page :
222
Abstract :
This paper reports initial data from the application of the first dedicated buckminsterfullerene ion beam system developed for routine use on existing ToF-SIMS instruments for static SIMS and chemical imaging. The ion gun provides a selectable beam of C60+ and C602+ primary ions, producing a nA beam of C60+ focusable to 1 μm spot size. The results of comparative studies of bulk polymers and thin films using C60+ and Ga+ ions are presented. Compared to Ga+, C60+ provides a very substantial increase in real ion yields, especially at high mass, with no concomitant increase in the relative yield of low mass fragments.
Keywords :
GA , Polyatomic , C60 , Ion source , SSIMS
Journal title :
Applied Surface Science
Serial Year :
2003
Journal title :
Applied Surface Science
Record number :
998425
Link To Document :
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