Metal implant standards for surface analysis by TOF-SIMS and dynamic SIMS: comparison with TRIM simulation

A comprehensive set of ion implanted standards has been prepared and extensively characterized by dynamic and TOF-SIMS. It is shown that the distinct shape of ion implant distribution provides various means to account for measurement artifacts. The results of depth profiling have been compared with theoretically modeled distributions. It has been found that measured projected ranges of light elements are 30–40% less than theoretically predicted by Monte Carlo simulations. Chemical segregation is proposed to have played a role in this shift. The experimental data obtained using three different SIMS techniques demonstrates that prepared set of relevant metallic implants provide adequate calibration reference for accurate surface and near-surface trace metal analysis.