Title of article
Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration
Author/Authors
S.B Cho، نويسنده , , H.K. Shon، نويسنده , , H.J. Kang، نويسنده , , T.E Hong، نويسنده , , H.K. Kim ، نويسنده , , H.I Lee، نويسنده , , K.J. Kim، نويسنده , , D.W. Moon، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
302
To page
305
Abstract
SIMS quantification and depth scale calibration has been based on ion implanted standards. In this work, the feasibility of using multiple delta layer reference materials for quantitative SIMS depth profiling is tested and presented. Preliminary studies on application of multiple As delta layer Si thin films to shallow junction analysis will be presented and discussed.
Keywords
As doping , Delta layer , MEIS , RSF , SIMS
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998444
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