Six months repeatability of D-SIMS depth profile using an ultra-low-energy probe

The use of ultra-low-energy SIMS for characterizing the shallow implants, such as boron and arsenic, is now widely employed. This article investigates the repeatability of SIMS analysis in shallow depth profile during a 6-month period. Using ultra-low-energy O2+ primary ion beams, the delta-doped B sample (four layers, 5.3 nm/cycle) is analyzed using the same conditions. Our results show that the variance of secondary ion intensity (30Si+), sputter rate and the measured doses in 6-month period is within 5.0, 2.5 and 3.5% relative standard density (RSD) respectively.