NO adsorption on Ge(1 0 0) studied by TPD

We present temperature-programmed desorption (TPD) studies of the adsorption of submonolayer coverages of nitric oxide on a Ge(1 0 0) surface at low temperatures, followed by electron irradiation which alters the surface chemistry. Desorption peaks near 180 K indicate the non-dissociative nature of the adsorption, in addition to evidence for dissociation and recombination–desorption as N2 molecules. Desorption after electron dosing of the surface indicates that this system exhibits electron-stimulated associative desorption of N2, and the likely involvement of NO dimers on the surface which also produce N2O desorption.