• Title of article

    PLD of HgCdTe on two kinds of Si substrate

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    6
  • From page
    465
  • To page
    470
  • Abstract
    Films of HgCdTe have been obtained by pulse laser deposition method in dynamic vacuum pressure;10y6 Torr. at 293–543 K. Two different kinds of Si surface were used as substrate: a. flat standard polished 1004 surface and b. anisotropically chemically etched patterned surface. The results of a scanning electron microscopy investigation, electron probe microanalysis and I–V characteristic measurements showed a strong influence of the substrate kind on the morphology, composition, growth mode, growth defects and transport of HgCdTerSi heterostructure. q1999 Elsevier Science B.V. All rights reserved.
  • Keywords
    HgCdTe film , Pulse laser deposition , morphology , Patterned substrate , HgCdTerSi heterostructure , I–V characteristics
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    998522

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=998522